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Influence of post-deposition heat treatment on electrical transport properties of In2S3-buffered Cu(In,Ga)Se2 cells

Identifieur interne : 000A42 ( Main/Repository ); précédent : 000A41; suivant : 000A43

Influence of post-deposition heat treatment on electrical transport properties of In2S3-buffered Cu(In,Ga)Se2 cells

Auteurs : RBID : Pascal:13-0229202

Descripteurs français

Pascal (Inist)
- Traitement thermique, Propriété électrique, Propriété transport, Caractéristique électrique, Cellule solaire, Recuit, Caractéristique courant tension, Interface, Diode, Mesure capacité électrique, Etat interface, Addition phosphore, Modification chimique, Séléniure d'indium, Sulfure d'indium, Cuivre, Gallium, Séléniure de cuivre, Séléniure de gallium, In2S3, He, 7350, 8460J, 7361.
Wicri :
- concept : Cuivre.

English descriptors

KwdEn :
- Annealing, Capacitance measurement, Chemical modification, Copper, Copper selenides, Diodes, Electrical characteristic, Electrical properties, Gallium, Gallium selenides, Heat treatments, IV characteristic, Indium selenides, Indium sulfide, Interface states, Interfaces, Phosphorus additions, Solar cells, Transport properties.

Abstract

The electrical characteristics of Cu(In,Ga)Se₂-based solar cells with In₂S₃ buffer were investigated. The effects of post-deposition annealing in helium or in air on current-voltage characteristics, net acceptor density profiles and admittance spectra were studied. Analysis of the current-voltage characteristics showed that interface recombination dominated transport in the as-deposited devices was reduced after annealing and partially replaced by bulk recombination. This was accompanied by a decrease in the saturation current and diode ideality factor. The influence of the heat treatment on the buffer/hetero-interface region as determined by capacitance measurements was minor. We conclude that a reduction in the interface states density and in the p + layer doping caused by the chemical modification of the hetero-interface region is the major source of the improvement.

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Pascal:13-0229202

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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Influence of post-deposition heat treatment on electrical transport properties of In<sub>2</sub>
S<sub>3</sub>
-buffered Cu(In,Ga)Se<sub>2 </sub>
cells</title>
<author><name sortKey="Abdel Maksoud, H" uniqKey="Abdel Maksoud H">H. Abdel Maksoud</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Physics, Warsaw University of Technology</s1>
<s2>Warsaw</s2>
<s3>POL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Pologne</country>
<wicri:noRegion>Warsaw</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Igalson, M" uniqKey="Igalson M">M. Igalson</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Physics, Warsaw University of Technology</s1>
<s2>Warsaw</s2>
<s3>POL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Pologne</country>
<wicri:noRegion>Warsaw</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Spiering, S" uniqKey="Spiering S">S. Spiering</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Zentrum für Sonnenenergie- und Wasserstoff-Forschung (ZSW) Baden-Württemberg, Industriestrasse 6</s1>
<s2>70565 Stuttgart</s2>
<s3>DEU</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<wicri:noRegion>70565 Stuttgart</wicri:noRegion>
<wicri:noRegion>Industriestrasse 6</wicri:noRegion>
<wicri:noRegion>70565 Stuttgart</wicri:noRegion>
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<publicationStmt><idno type="inist">13-0229202</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0229202 INIST</idno>
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<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term>
<term>Capacitance measurement</term>
<term>Chemical modification</term>
<term>Copper</term>
<term>Copper selenides</term>
<term>Diodes</term>
<term>Electrical characteristic</term>
<term>Electrical properties</term>
<term>Gallium</term>
<term>Gallium selenides</term>
<term>Heat treatments</term>
<term>IV characteristic</term>
<term>Indium selenides</term>
<term>Indium sulfide</term>
<term>Interface states</term>
<term>Interfaces</term>
<term>Phosphorus additions</term>
<term>Solar cells</term>
<term>Transport properties</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Traitement thermique</term>
<term>Propriété électrique</term>
<term>Propriété transport</term>
<term>Caractéristique électrique</term>
<term>Cellule solaire</term>
<term>Recuit</term>
<term>Caractéristique courant tension</term>
<term>Interface</term>
<term>Diode</term>
<term>Mesure capacité électrique</term>
<term>Etat interface</term>
<term>Addition phosphore</term>
<term>Modification chimique</term>
<term>Séléniure d'indium</term>
<term>Sulfure d'indium</term>
<term>Cuivre</term>
<term>Gallium</term>
<term>Séléniure de cuivre</term>
<term>Séléniure de gallium</term>
<term>In2S3</term>
<term>He</term>
<term>7350</term>
<term>8460J</term>
<term>7361</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cuivre</term>
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<front><div type="abstract" xml:lang="en">The electrical characteristics of Cu(In,Ga)Se<sub>2</sub>
-based solar cells with In<sub>2</sub>
S<sub>3</sub>
 buffer were investigated. The effects of post-deposition annealing in helium or in air on current-voltage characteristics, net acceptor density profiles and admittance spectra were studied. Analysis of the current-voltage characteristics showed that interface recombination dominated transport in the as-deposited devices was reduced after annealing and partially replaced by bulk recombination. This was accompanied by a decrease in the saturation current and diode ideality factor. The influence of the heat treatment on the buffer/hetero-interface region as determined by capacitance measurements was minor. We conclude that a reduction in the interface states density and in the p + layer doping caused by the chemical modification of the hetero-interface region is the major source of the improvement.</div>
</front>
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S<sub>3</sub>
-buffered Cu(In,Ga)Se<sub>2 </sub>
cells</s1>
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<fA09 i1="01" i2="1" l="ENG"><s1>E-MRS 2012 Symposium B</s1>
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<fA11 i1="01" i2="1"><s1>ABDEL MAKSOUD (H.)</s1>
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<fA11 i1="02" i2="1"><s1>IGALSON (M.)</s1>
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<s9>ed.</s9>
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<s9>ed.</s9>
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<fA12 i1="04" i2="1"><s1>SHAFARMAN (William)</s1>
<s9>ed.</s9>
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<fA12 i1="05" i2="1"><s1>KATAGIRI (Hirono)</s1>
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<fA14 i1="01"><s1>Faculty of Physics, Warsaw University of Technology</s1>
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<sZ>2 aut.</sZ>
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<fA14 i1="02"><s1>Zentrum für Sonnenenergie- und Wasserstoff-Forschung (ZSW) Baden-Württemberg, Industriestrasse 6</s1>
<s2>70565 Stuttgart</s2>
<s3>DEU</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA18 i1="01" i2="1"><s1>European Materials Research Society (E-MRS)</s1>
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<fA47 i1="01" i2="1"><s0>13-0229202</s0>
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<s2>C</s2>
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</fA66>
<fC01 i1="01" l="ENG"><s0>The electrical characteristics of Cu(In,Ga)Se<sub>2</sub>
-based solar cells with In<sub>2</sub>
S<sub>3</sub>
 buffer were investigated. The effects of post-deposition annealing in helium or in air on current-voltage characteristics, net acceptor density profiles and admittance spectra were studied. Analysis of the current-voltage characteristics showed that interface recombination dominated transport in the as-deposited devices was reduced after annealing and partially replaced by bulk recombination. This was accompanied by a decrease in the saturation current and diode ideality factor. The influence of the heat treatment on the buffer/hetero-interface region as determined by capacitance measurements was minor. We conclude that a reduction in the interface states density and in the p + layer doping caused by the chemical modification of the hetero-interface region is the major source of the improvement.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70C50</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>001D06C02D1</s0>
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<fC02 i1="03" i2="3"><s0>001B70C61</s0>
</fC02>
<fC02 i1="04" i2="X"><s0>230</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Traitement thermique</s0>
<s5>01</s5>
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<s5>03</s5>
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<s5>04</s5>
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<fC03 i1="05" i2="3" l="FRE"><s0>Cellule solaire</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Solar cells</s0>
<s5>05</s5>
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<s5>08</s5>
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<s5>10</s5>
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<s5>10</s5>
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<s5>11</s5>
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<s5>11</s5>
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<s5>12</s5>
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<s5>13</s5>
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<fC03 i1="13" i2="X" l="SPA"><s0>Modificación química</s0>
<s5>13</s5>
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<fC03 i1="14" i2="3" l="FRE"><s0>Séléniure d'indium</s0>
<s2>NK</s2>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Indium selenides</s0>
<s2>NK</s2>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Sulfure d'indium</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Indium sulfide</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Indio sulfuro</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Cuivre</s0>
<s2>NC</s2>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Copper</s0>
<s2>NC</s2>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Gallium</s0>
<s2>NC</s2>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Gallium</s0>
<s2>NC</s2>
<s5>17</s5>
</fC03>
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<s2>NK</s2>
<s5>18</s5>
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<s2>NK</s2>
<s5>18</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Séléniure de gallium</s0>
<s2>NK</s2>
<s5>19</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Gallium selenides</s0>
<s2>NK</s2>
<s5>19</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>In2S3</s0>
<s4>INC</s4>
<s5>46</s5>
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<s4>INC</s4>
<s5>47</s5>
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<s4>INC</s4>
<s5>71</s5>
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<s4>INC</s4>
<s5>72</s5>
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<s4>INC</s4>
<s5>73</s5>
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<fN21><s1>210</s1>
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<fN44 i1="01"><s1>OTO</s1>
</fN44>
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<pR><fA30 i1="01" i2="1" l="ENG"><s1>E-MRS Spring Meeting 2012. Symposium B "Thin Film Chalcogenide Photovoltaic Materials"</s1>
<s3>Strasbourg FRA</s3>
<s4>2012-05-14</s4>
</fA30>
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Influence of post-deposition heat treatment on electrical transport properties of In2S3-buffered Cu(In,Ga)Se2 cells

Influence of post-deposition heat treatment on electrical transport properties of In2S3-buffered Cu(In,Ga)Se2 cells

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri